- Manufacture :
- Series :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,241
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ON Semiconductor | MOSFET N-CH 250V 4.4A IPAK-3 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 50W (Tc) | N-Channel | - | 250V | 4.4A (Tc) | 1.1 Ohm @ 2.2A, 10V | 5V @ 250µA | 6nC @ 10V | 250pF @ 25V | 10V | ±30V | ||
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2,263
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STMicroelectronics | MOSFET N-CH 450V 1.8A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 27W (Tc) | N-Channel | - | 450V | 1.8A (Tc) | 3.8 Ohm @ 500mA, 10V | 4.5V @ 50µA | 6nC @ 10V | 150pF @ 25V | 10V | ±30V |
