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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Input Capacitance (Ciss) (Max) @ Vds
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GeneSiC Semiconductor TRANS SJT 650V 4A TO276 - Obsolete Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 125W (Tc) 650V 4A (Tc) (165°C) 415 mOhm @ 4A 324pF @ 35V
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