Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STU95N3LLH6
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RFQ
1,833
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STMicroelectronics MOSFET N-CH 30V 80A IPAK DeepGATE™, STripFET™ VI Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 70W (Tc) N-Channel - 30V 80A (Tc) 4.7 mOhm @ 40A, 10V 2.5V @ 250µA 20nC @ 4.5V 2200pF @ 25V 4.5V, 10V ±25V
STU75N3LLH6-S
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RFQ
2,909
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STMicroelectronics MOSFET N-CH 30V 75A IPAK DeepGATE™, STripFET™ VI Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 30V 75A (Tc) 5.9 mOhm @ 37.5A, 10V 2.5V @ 250µA 17nC @ 4.5V 1690pF @ 25V 4.5V, 10V ±20V
STU150N3LLH6
Per Unit
$2.32
RFQ
1,954
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 30V 80A IPAK DeepGATE™, STripFET™ VI Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 110W (Tc) N-Channel - 30V 80A (Tc) 3.3 mOhm @ 40A, 10V 2.5V @ 250µA 40nC @ 4.5V 4040pF @ 25V 4.5V, 10V ±20V
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