Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLU3303PBF
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RFQ
3,349
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Infineon Technologies MOSFET N-CH 30V 35A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 68W (Tc) N-Channel - 30V 35A (Tc) 31 mOhm @ 21A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V
64-4092PBF
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RFQ
1,451
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Infineon Technologies MOSFET N-CH 55V 28A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 68W (Tc) N-Channel - 55V 28A (Tc) 40 mOhm @ 17A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V
IRLU2705
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RFQ
2,539
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Infineon Technologies MOSFET N-CH 55V 28A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 68W (Tc) N-Channel - 55V 28A (Tc) 40 mOhm @ 17A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V
IRLU3303
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RFQ
1,254
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 30V 35A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 68W (Tc) N-Channel - 30V 35A (Tc) 31 mOhm @ 21A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V
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