- Manufacture :
- Packaging :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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885
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Global Power Technologies Group | MOSFET N-CH 800V 3A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 94W (Tc) | N-Channel | 800V | 3A (Tc) | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | 10V | ±30V | ||
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1,272
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ON Semiconductor | MOSFET N-CH 800V 1.8A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | 800V | 1.8A (Tc) | 6.3 Ohm @ 900mA, 10V | 5V @ 250µA | 15nC @ 10V | 550pF @ 25V | 10V | ±30V | ||
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1,846
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ON Semiconductor | MOSFET N-CH 800V 2.9A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 96W (Tc) | N-Channel | 800V | 2.9A (Tc) | 4.5 Ohm @ 1.2A, 10V | 4.5V @ 50µA | 17nC @ 10V | 440pF @ 25V | 10V | ±30V |
