- Manufacture :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,617
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NXP USA Inc. | MOSFET N-CH 25V 75A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 107W (Tc) | N-Channel | - | 25V | 75A (Tc) | 6.6 mOhm @ 25A, 10V | 2.15V @ 1mA | 11.7nC @ 4.5V | 1570pF @ 12V | 4.5V, 10V | ±20V | ||
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1,674
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NXP USA Inc. | MOSFET N-CH 25V 75A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 107W (Tc) | N-Channel | - | 25V | 75A (Tc) | 9.5 mOhm @ 25A, 10V | 3.2V @ 1mA | 17.1nC @ 10V | 860pF @ 12V | 10V | ±20V | ||
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2,577
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NXP USA Inc. | MOSFET N-CH 25V 75A SOT533 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 107W (Tc) | N-Channel | - | 25V | 75A (Tc) | 9 mOhm @ 25A, 10V | 2V @ 1mA | 11nC @ 4.5V | 970pF @ 12V | 5V, 10V | ±20V | ||
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958
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NXP USA Inc. | MOSFET N-CH 25V 75A SOT533 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 187W (Tc) | N-Channel | - | 25V | 75A (Tc) | 6 mOhm @ 25A, 10V | 2V @ 1mA | 16.3nC @ 4.5V | 1375pF @ 12V | 5V, 10V | ±20V | ||
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3,434
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NXP USA Inc. | MOSFET N-CH 30V 75A SOT533 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 166W (Tc) | N-Channel | - | 30V | 75A (Tc) | 5.5 mOhm @ 25A, 10V | 2.5V @ 1mA | 23nC @ 5V | 2180pF @ 25V | 5V, 10V | ±20V | ||
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2,909
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STMicroelectronics | MOSFET N-CH 30V 75A IPAK | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 75A (Tc) | 5.9 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 17nC @ 4.5V | 1690pF @ 25V | 4.5V, 10V | ±20V |
