- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
10 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,091
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ON Semiconductor | MOSFET N-CH 60V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 36W (Tc) | N-Channel | - | 60V | 20A (Tc) | 39 mOhm @ 10A, 10V | 2.5V @ 250µA | 15nC @ 10V | 675pF @ 25V | 4.5V, 10V | ±20V | ||
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2,438
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Global Power Technologies Group | MOSFET N-CH 500V 4.5A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 98.4W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.5 Ohm @ 2.25A, 10V | 5V @ 250µA | 15nC @ 10V | 645pF @ 25V | 10V | ±30V | ||
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1,207
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Global Power Technologies Group | MOSFET N-CH 650V 4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 98.4W (Tc) | N-Channel | - | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | ||
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3,362
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ON Semiconductor | MOSFET N-CH 900V 1.7A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 7.2 Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | ||
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1,272
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ON Semiconductor | MOSFET N-CH 800V 1.8A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 800V | 1.8A (Tc) | 6.3 Ohm @ 900mA, 10V | 5V @ 250µA | 15nC @ 10V | 550pF @ 25V | 10V | ±30V | ||
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1,445
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ON Semiconductor | MOSFET N-CH 250V 6.2A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 250V | 6.2A (Tc) | 550 mOhm @ 3.1A, 10V | 5V @ 250µA | 15nC @ 10V | 530pF @ 25V | 10V | ±30V | ||
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2,225
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STMicroelectronics | MOSFET N-CH 650V 7A IPAK | MDmesh™ V | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 650V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 5V @ 250µA | 15nC @ 10V | 690pF @ 100V | 10V | ±25V | ||
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779
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ON Semiconductor | MOSFET N-CH 600V 6.8A IPAK-3 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 84W (Tc) | N-Channel | - | 600V | 6.6A (Tc) | 745 mOhm @ 3.25A, 10V | 4V @ 250µA | 15nC @ 10V | 440pF @ 50V | 10V | ±25V | ||
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2,970
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ON Semiconductor | MOSFET N-CH 60V 9A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 1.5W (Ta), 28.8W (Tj) | N-Channel | - | 60V | 9A (Ta) | 150 mOhm @ 4.5A, 10V | 4V @ 250µA | 15nC @ 10V | 280pF @ 25V | 10V | ±20V | ||
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1,328
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ON Semiconductor | MOSFET N-CH 60V 16.8A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 38W (Tc) | N-Channel | - | 60V | 16.8A (Tc) | 63 mOhm @ 8.4A, 10V | 4V @ 250µA | 15nC @ 10V | 590pF @ 25V | 10V | ±25V |
