Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
2,177
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ON Semiconductor MOSFET N-CH 250V 11.4A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 73W (Tc) N-Channel - 250V 11.4A (Tc) 270 mOhm @ 5.7A, 10V 4V @ 250µA 53.5nC @ 10V 1080pF @ 25V 10V ±30V
FQI11P06TU
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RFQ
1,319
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ON Semiconductor MOSFET P-CH 60V 11.4A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 53W (Tc) P-Channel - 60V 11.4A (Tc) 175 mOhm @ 5.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 10V ±25V
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