- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,825
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ON Semiconductor | MOSFET N-CH 400V 50A TO-264 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 460W (Tc) | N-Channel | - | 400V | 50A (Tc) | 75 mOhm @ 25A, 10V | 5V @ 250µA | 210nC @ 10V | 7500pF @ 25V | 10V | ±30V | ||
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2,124
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IXYS | MOSFET N-CH 800V 50A PLUS264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | PLUS264™ | 1135W (Tc) | N-Channel | - | 800V | 50A (Tc) | 160 mOhm @ 500mA, 10V | 5.5V @ 8mA | 260nC @ 10V | 7200pF @ 25V | 10V | ±30V | |||
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1,114
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IXYS | MOSFET N-CH 500V 50A TO-264AA | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 560W (Tc) | N-Channel | - | 500V | 50A (Tc) | 80 mOhm @ 25A, 10V | 4.5V @ 8mA | 330nC @ 10V | 9400pF @ 25V | 10V | ±20V | |||
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1,307
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IXYS | 850V/50A ULTRA JUNCTION X-CLASS | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 890W (Tc) | N-Channel | - | 850V | 50A (Tc) | 105 mOhm @ 500mA, 10V | 5.5V @ 4mA | 152nC @ 10V | 4480pF @ 25V | 10V | ±30V |
