- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,177
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Infineon Technologies | MOSFET N-CH 650V 1.8A TO251-3 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 25W (Tc) | N-Channel | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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2,333
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 11A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251 (IPAK) | 25W (Tc) | N-Channel | 60V | 11A (Tc) | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 500pF @ 15V | 4.5V, 10V | ±20V |