Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AOI4C60
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RFQ
3,555
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 4A TO-252 - Obsolete Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 125W (Tc) N-Channel 600V 4A (Tc) 950 mOhm @ 1.3A, 10V 5V @ 250µA 18nC @ 10V 910pF @ 100V 10V ±30V
AOI4T60
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RFQ
3,870
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 4A TO251A - Obsolete Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 83W (Tc) N-Channel 600V 4A (Tc) 2.1 Ohm @ 1A, 10V 5V @ 250µA 15nC @ 10V 460pF @ 100V 10V ±30V
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