- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,837
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Infineon Technologies | MOSFET N-CH 550V 7.1A TO-251 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 66W (Tc) | N-Channel | 550V | 7.1A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | 680pF @ 100V | 10V | ±20V | ||
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2,445
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 30A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251 (IPAK) | 66W (Tc) | N-Channel | 60V | 30A (Tc) | 34 mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | 1180pF @ 30V | 4.5V, 10V | ±20V |