Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPS075N03LGAKMA1
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RFQ
803
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Infineon Technologies MOSFET N-CH 30V 50A TO251-3-11 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 47W (Tc) N-Channel 30V 50A (Tc) 7.5 mOhm @ 30A, 10V 2.2V @ 250µA 18nC @ 10V 1900pF @ 15V 4.5V, 10V ±20V
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RFQ
642
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Infineon Technologies MOSFET N-CHANNEL 30V 50A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 47W (Tc) N-Channel 30V 50A (Tc) 7.5 mOhm @ 30A, 10V 2.2V @ 250µA 18nC @ 10V 1900pF @ 15V 4.5V, 10V -
NTD4860NA-35G
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RFQ
2,383
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ON Semiconductor MOSFET N-CH 25V 65A IPAK TRIMMED - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 1.28W (Ta), 50W (Tc) N-Channel 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 21.8nC @ 10V 1308pF @ 12V - -
NTD4860N-35G
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RFQ
3,567
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ON Semiconductor MOSFET N-CH 25V 10.4A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 1.28W (Ta), 50W (Tc) N-Channel 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 16.5nC @ 4.5V 1308pF @ 12V 4.5V, 10V ±20V
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