- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,837
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Infineon Technologies | MOSFET N-CH 550V 7.1A TO-251 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 66W (Tc) | N-Channel | - | 550V | 7.1A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | 680pF @ 100V | 10V | ±20V | ||
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1,556
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Infineon Technologies | MOSFET N-CH 650V 3.2A TO251-3 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 38W (Tc) | N-Channel | - | 650V | 3.2A (Tc) | 1.4 Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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2,671
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Infineon Technologies | MOSFET N-CH 600V 3.2A TO251-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 38W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | 400pF @ 25V | 10V | ±20V | ||
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3,590
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Infineon Technologies | MOSFET N-CH 800V 7A TO251-3 | CoolMOS™ P7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 51W (Tc) | N-Channel | - | 800V | 7A (Tc) | 750 mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | 460pF @ 500V | 10V | ±20V |
