Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.86
RFQ
995
Ships today + free overnight shipping
Diodes Incorporated MOSFET N-CHANNEL 700V 5A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 78W (Tc) N-Channel - 700V 5A (Tc) 1.5 Ohm @ 1A, 10V 4V @ 250µA 7.5nC @ 10V 342pF @ 50V 10V ±30V
IPS80R2K4P7AKMA1
Per Unit
$0.90
RFQ
1,727
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 800V 2.5A TO251-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 22W (Tc) N-Channel - 800V 2.5A (Tc) 2.4 Ohm @ 800mA, 10V 3.5V @ 40µA 7.5nC @ 10V 150pF @ 500V 10V ±20V
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