Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
2SJ681(Q)
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RFQ
603
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 5A PW-MOLD - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PW-MOLD2 20W (Ta) P-Channel - 60V 5A (Ta) 170 mOhm @ 2.5A, 10V 2V @ 1mA 15nC @ 10V 700pF @ 10V 4V, 10V ±20V
2SK4017(Q)
Per Unit
$0.68
RFQ
2,414
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 5A PW-MOLD2 U-MOSIII Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PW-MOLD2 20W (Tc) N-Channel - 60V 5A (Ta) 100 mOhm @ 2.5A, 10V 2.5V @ 1mA 15nC @ 10V 730pF @ 10V 4V, 10V ±20V
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