Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF5305STRR
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RFQ
2,925
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRFS31N20DTRR
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RFQ
1,696
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Infineon Technologies MOSFET N-CH 200V 31A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 200W (Tc) N-Channel - 200V 31A (Tc) 82 mOhm @ 18A, 10V 5.5V @ 250µA 110nC @ 10V 2370pF @ 25V 10V ±30V
IRFS31N20DTRL
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RFQ
744
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Infineon Technologies MOSFET N-CH 200V 31A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 200W (Tc) N-Channel - 200V 31A (Tc) 82 mOhm @ 18A, 10V 5.5V @ 250µA 110nC @ 10V 2370pF @ 25V 10V ±30V
94-4582
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RFQ
3,732
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
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