- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,868
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Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
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2,233
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Nexperia USA Inc. | MOSFET N-CH 100V 41A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 149W (Tc) | N-Channel | 100V | 41A (Tc) | 35 mOhm @ 25A, 10V | 4V @ 1mA | - | 2535pF @ 25V | 10V | ±20V |