- Manufacture :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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939
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STMicroelectronics | MOSFET N-CH 40V 120A D2PAK | STripFET™ III | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 310W (Tc) | N-Channel | - | 40V | 120A (Tc) | 4.3 mOhm @ 95A, 10V | 4V @ 250µA | 130nC @ 5V | 5800pF @ 25V | 10V | ±20V | ||
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3,709
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ON Semiconductor | MOSFET N-CH 60V 120A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 215W (Tc) | N-Channel | - | 60V | 120A (Tc) | 6 mOhm @ 60A, 10V | 4V @ 250µA | 170nC @ 10V | 5800pF @ 25V | 10V | ±20V | ||
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2,345
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ON Semiconductor | MOSFET N-CH 60V 120A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 215W (Tc) | N-Channel | - | 60V | 120A (Tc) | 6 mOhm @ 60A, 10V | 4V @ 250µA | 170nC @ 10V | 5800pF @ 25V | 10V | ±20V | ||
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1,609
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STMicroelectronics | MOSFET N-CH 100V 65A D2PAK | DeepGATE™, STripFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 100V | 65A (Tc) | 19.5 mOhm @ 30A, 10V | 4V @ 250µA | 85nC @ 10V | 5800pF @ 25V | 10V | ±20V |
