- Manufacture :
- Packaging :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,165
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IXYS | MOSFET N-CH 650V 4A X2 TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 80W (Tc) | N-Channel | - | 650V | 4A (Tc) | 850 mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | 10V | ±30V | |||
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1,737
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IXYS | MOSFET N-CH 1.5KV 4A TO263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 280W (Tc) | N-Channel | - | 1500V | 4A (Tc) | 6 Ohm @ 500mA, 10V | 5V @ 250µA | 44.5nC @ 10V | 1576pF @ 25V | 10V | ±30V | |||
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2,673
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 4A TO263 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 58W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V | ||
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3,939
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 4A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 58W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V | |||
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2,015
Ships today + free overnight shipping
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 4A TO263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 58W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V |