- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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604
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Vishay Siliconix | MOSFET N-CH 150V 23A D2PAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 100W (Tc) | N-Channel | - | 150V | 23A (Tc) | 73 mOhm @ 15A, 10V | 4V @ 250µA | 35nC @ 10V | 1290pF @ 25V | 6V, 10V | ±20V | ||
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3,985
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Infineon Technologies | MOSFET N-CH 550V 23A TO-263 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
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3,356
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Infineon Technologies | MOSFET N-CH 150V 23A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 136W (Tc) | N-Channel | - | 150V | 23A (Tc) | 90 mOhm @ 14A, 10V | 5.5V @ 250µA | 56nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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3,383
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STMicroelectronics | MOSFET N-CH 600V 23A D2PAK | FDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 600V | 23A (Tc) | 150 mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5nC @ 10V | 2090pF @ 100V | 10V | ±25V | |||
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3,701
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Nexperia USA Inc. | MOSFET N-CH 100V 23A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 99W (Tc) | N-Channel | - | 100V | 23A (Tc) | 75 mOhm @ 13A, 10V | 4V @ 1mA | - | 1210pF @ 25V | 10V | ±20V | |||
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3,732
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Infineon Technologies | MOSFET P-CH 100V 23A D2PAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | ||
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3,641
Ships today + free overnight shipping
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Nexperia USA Inc. | MOSFET N-CH 100V 23A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 99W (Tc) | N-Channel | - | 100V | 23A (Tc) | 72 mOhm @ 10A, 10V | 2V @ 1mA | - | 1704pF @ 25V | 5V, 10V | ±15V | |||
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3,784
Ships today + free overnight shipping
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Infineon Technologies | MOSFET P-CH 100V 23A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V |
