Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA54N30T
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RFQ
2,901
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IXYS MOSFET N-CH 300V 54A TO-263 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) - N-Channel - 300V 54A (Tc) - - - - - -
IRL3103D2S
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RFQ
1,025
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Infineon Technologies MOSFET N-CH 30V 54A D2PAK FETKY™ Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK - N-Channel - 30V 54A (Tc) 14 mOhm @ 32A, 10V - 44nC @ 4.5V 2300pF @ 25V 4.5V, 10V ±16V
IRL3715SPBF
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RFQ
1,603
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Infineon Technologies MOSFET N-CH 20V 54A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 71W (Tc) N-Channel - 20V 54A (Tc) 14 mOhm @ 26A, 10V 3V @ 250µA 17nC @ 4.5V 1060pF @ 10V 4.5V, 10V ±20V
IRL3715S
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RFQ
2,877
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 20V 54A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 71W (Tc) N-Channel - 20V 54A (Tc) 14 mOhm @ 26A, 10V 3V @ 250µA 17nC @ 4.5V 1060pF @ 10V 4.5V, 10V ±20V
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