Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPB80N06S205ATMA1
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RFQ
3,638
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Infineon Technologies MOSFET N-CH 55V 80A TO263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 80A (Tc) 4.8 mOhm @ 80A, 10V 4V @ 250µA 170nC @ 10V 5110pF @ 25V 10V ±20V
SPB80N06S2-05
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RFQ
1,642
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Infineon Technologies MOSFET N-CH 55V 80A D2PAK OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 80A (Tc) 4.8 mOhm @ 80A, 10V 4V @ 250µA 170nC @ 10V 6790pF @ 25V 10V ±20V
IPB80N06S4L05ATMA1
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RFQ
1,589
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Infineon Technologies MOSFET N-CH 60V 80A TO263-3 OptiMOS™ Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 107W (Tc) N-Channel - 60V 80A (Tc) 4.8 mOhm @ 80A, 10V 2.2V @ 60µA 110nC @ 10V 8180pF @ 25V 4.5V, 10V ±16V
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