- Manufacture :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,787
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ON Semiconductor | MOSFET N-CH 200V 4.5A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 52W (Tc) | N-Channel | - | 200V | 4.5A (Tc) | 1.2 Ohm @ 2.25A, 10V | 2V @ 250µA | 6.2nC @ 5V | 325pF @ 25V | 5V, 10V | ±25V | ||
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1,035
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IXYS | MOSFET N-CH | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263HV | 60W (Tc) | N-Channel | Depletion Mode | 1000V | 800mA (Tj) | 21 Ohm @ 400mA, 0V | 4V @ 25µA | 14.6nC @ 5V | 325pF @ 25V | 0V | ±20V | |||
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2,192
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IXYS | MOSFET N-CH 1000V 800MA D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 60W (Tc) | N-Channel | Depletion Mode | 1000V | 800mA (Tc) | 21 Ohm @ 400mA, 0V | - | 14.6nC @ 5V | 325pF @ 25V | - | ±20V |
