- Packaging :
- Operating Temperature :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,040
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Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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3,399
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-263 | CoolMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | ||
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2,087
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-263 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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1,007
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V |
