- Series :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,782
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ON Semiconductor | MOSFET N-CH 250V 8A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 87W (Tc) | N-Channel | 250V | 8A (Tc) | 550 mOhm @ 4A, 10V | 5V @ 250µA | 15nC @ 10V | 530pF @ 25V | 10V | ±30V | ||
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1,190
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Vishay Siliconix | MOSFET N-CH 800V 1.8A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | 800V | 1.8A (Tc) | 6.5 Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
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898
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Vishay Siliconix | MOSFET N-CH 800V 1.8A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | 800V | 1.8A (Tc) | 6.5 Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
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3,240
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Vishay Siliconix | MOSFET N-CH 800V 1.8A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | 800V | 1.8A (Tc) | 6.5 Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
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3,610
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO-263 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 75W (Tc) | N-Channel | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||
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1,467
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Infineon Technologies | MOSFET N-CH 200V 9.5A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 75W (Tc) | N-Channel | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V |
