- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,614
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ON Semiconductor | MOSFET N-CH 200V 10A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 87W (Tc) | N-Channel | - | 200V | 10A (Tc) | 360 mOhm @ 5A, 10V | 2V @ 250µA | 17nC @ 5V | 830pF @ 25V | 5V, 10V | ±20V | ||
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1,552
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Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | ||
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2,278
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Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | N-Channel | - | 60V | 10A (Tc) | 200 mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | ||
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2,692
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Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | N-Channel | - | 60V | 10A (Tc) | 200 mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | ||
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1,414
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Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | ||
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1,090
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Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | N-Channel | - | 60V | 10A (Tc) | 200 mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
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3,901
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Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | N-Channel | - | 60V | 10A (Tc) | 200 mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
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2,177
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Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V |
