Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
HUF75617D3
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RFQ
3,384
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 100V 16A TO-251AA UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 64W (Tc) N-Channel - 100V 16A (Tc) 90 mOhm @ 16A, 10V 4V @ 250µA 39nC @ 20V 570pF @ 25V 10V ±20V
FQP2N60
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RFQ
1,447
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ON Semiconductor MOSFET N-CH 600V 2.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 64W (Tc) N-Channel - 600V 2.4A (Tc) 4.7 Ohm @ 1.2A, 10V 4V @ 250µA 11nC @ 10V 350pF @ 25V 10V ±30V
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