Supplier Device Package :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$8.48
RFQ
3,226
Ships today + free overnight shipping
IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 780W (Tc) N-Channel - 650V 60A (Tc) 52 mOhm @ 30A, 10V 5V @ 4mA 108nC @ 10V 6300pF @ 25V 10V ±30V
Default Photo
Per Unit
$8.27
RFQ
1,809
Ships today + free overnight shipping
IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268HV 780W (Tc) N-Channel - 650V 60A (Tc) 52 mOhm @ 30A, 10V 5V @ 4mA 108nC @ 10V 6300pF @ 25V 10V ±30V
IXFH60N65X2
Per Unit
$8.95
RFQ
3,821
Ships today + free overnight shipping
IXYS MOSFET N-CH 650V 60A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 - 780W (Tc) N-Channel - 650V 60A (Tc) 52 mOhm @ 30A, 10V 5.5V @ 4mA 107nC @ 10V 6180pF @ 25V 10V ±30V
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