- Part Status :
- Package / Case :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,626
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Diodes Incorporated | MOSFET N-CH 60V 100MA 3-DFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-X1DFN1006 | 470mW (Ta) | N-Channel | 60V | 100mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.45nC @ 4.5V | 32pF @ 25V | 1.5V, 4V | ±20V | ||
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3,842
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Diodes Incorporated | MOSFET N-CH 20V 750MA 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-X1DFN1006 | 470mW (Ta) | N-Channel | 20V | 750mA (Ta) | 550 mOhm @ 600mA, 4.5V | 900mV @ 250µA | 0.5nC @ 4.5V | 36pF @ 16V | 1.8V, 4.5V | ±12V | |||
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3,313
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Diodes Incorporated | MOSFET N-CH 60V X2-DFN1006-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-X1DFN1006 | 470mW (Ta) | N-Channel | 60V | 100mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.45nC @ 4.5V | 32pF @ 25V | 1.5V, 4V | ±20V |
