- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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765
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 550V 18.1A TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO-252 | 119W (Tc) | N-Channel | - | 550V | 18.1A (Tc) | 280 mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | 773pF @ 100V | 13V | ±20V | |||
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1,998
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 550V 7.6A TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO-252 | 57W (Tc) | N-Channel | - | 550V | 7.6A (Tc) | 500 mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | 433pF @ 100V | 13V | ±20V | |||
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3,276
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N-CH 550V 13A DPAK | MDmesh™ V | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 110W (Tc) | N-Channel | - | 550V | 16A (Tc) | 192 mOhm @ 8A, 10V | 5V @ 250µA | 31nC @ 10V | 1260pF @ 100V | 10V | ±25V |
