- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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792
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Infineon Technologies | MOSFET N-CH 500V 4.3A PG-TO252 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 34W (Tc) | N-Channel | Super Junction | 500V | 4.3A (Tc) | 950 mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | 13V | ±20V | ||
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2,864
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Infineon Technologies | MOSFET N-CH 500V 4.3A PG-T0252 | CoolMOS™ CE | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 53W (Tc) | N-Channel | - | 500V | 4.3A (Tc) | 950 mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | 13V | ±20V | ||
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1,724
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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1,236
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STMicroelectronics | MOSFET N-CH 800V 3A DPAK | SuperMESH5™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 800V | 3A (Tc) | 2.5 Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5nC @ 10V | 175pF @ 100V | 10V | ±30V | |||
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3,902
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Infineon Technologies | MOSFET N-CH 700V 5.4A TO252-3 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 53W (Tc) | N-Channel | Super Junction | 700V | 5.4A (Tc) | 1.4 Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5nC @ 10V | 225pF @ 100V | 10V | ±20V | |||
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2,659
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Infineon Technologies | MOSFET N-CH 700V 8.5A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 43W (Tc) | N-Channel | - | 700V | 8.5A (Tc) | 600 mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | 364pF @ 400V | 10V | ±16V |
