Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFHM830DTR2PBF
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RFQ
2,345
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Infineon Technologies MOSFET N-CH 30V 20A PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (3x3) 2.8W (Ta), 37W (Tc) N-Channel - 30V 20A (Ta), 40A (Tc) 4.3 mOhm @ 20A, 10V 2.35V @ 50µA 27nC @ 10V 1797pF @ 25V 4.5V, 10V ±20V
IRFHM8326TRPBF
Per Unit
$0.72
RFQ
2,122
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Infineon Technologies MOSFET N-CH 30V 25A PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN - 2.8W (Ta), 37W (Tc) N-Channel - 30V 19A (Ta) 4.7 mOhm @ 20A, 10V 2.2V @ 50µA 39nC @ 10V 2496pF @ 10V 4.5V, 10V ±20V
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