- Manufacture :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,585
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Nexperia USA Inc. | MOSFET N-CH 30V 1.7A SOT23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 830mW (Tc) | N-Channel | - | 30V | 1.7A (Tc) | 117 mOhm @ 500mA, 10V | 2V @ 1mA | 4.6nC @ 10V | 195pF @ 10V | 4.5V, 10V | ±20V | ||
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2,854
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|
NXP USA Inc. | MOSFET N-CH 30V 2.5A SOT23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 830mW (Tc) | N-Channel | - | 30V | 2.5A (Tc) | 117 mOhm @ 500mA, 10V | 2V @ 1mA | 4.6nC @ 10V | 147pF @ 10V | 4.5V, 10V | ±20V | ||
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2,060
Ships today + free overnight shipping
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Nexperia USA Inc. | MOSFET N-CH 30V 1.9A SOT23 | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 830mW (Tc) | N-Channel | - | 30V | 1.9A (Tc) | 120 mOhm @ 1A, 10V | 2V @ 1mA | 10nC @ 10V | 190pF @ 10V | 5V, 10V | ±20V |
