Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIRA18DP-T1-GE3
Per Unit
$0.68
RFQ
1,908
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 30V 33A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 3.3W (Ta), 14.7W (Tc) N-Channel - 30V 33A (Tc) 7.5 mOhm @ 10A, 10V 2.4V @ 250µA 21.5nC @ 10V 1000pF @ 15V 4.5V, 10V +20V, -16V
IRFR3303TRPBF
Per Unit
$1.07
RFQ
3,659
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 30V 33A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 57W (Tc) N-Channel - 30V 33A (Tc) 31 mOhm @ 18A, 10V 4V @ 250µA 29nC @ 10V 750pF @ 25V 10V ±20V
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