- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,287
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Vishay Siliconix | MOSFET N-CH 30V 0.9A SC-70-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SC-70-3 | 340mW (Ta), 370mW (Tc) | N-Channel | 30V | 900mA (Tc) | 270 mOhm @ 900mA, 4.5V | 1.3V @ 250µA | 2.7nC @ 4.5V | 100pF @ 15V | 2.5V, 4.5V | ±12V | ||
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3,982
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Vishay Siliconix | MOSFET N-CH 30V 0.9A SOT323-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SC-70-3 | 340mW (Ta), 370mW (Tc) | N-Channel | 30V | 900mA (Tc) | 270 mOhm @ 900mA, 4.5V | 1.3V @ 250µA | 2.7nC @ 4.5V | 100pF @ 15V | 2.5V, 4.5V | ±12V | ||
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1,377
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Texas Instruments | MOSFET N-CH 30V 5A | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.4W (Ta), 17W (Tc) | N-Channel | 30V | 5A (Ta) | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | 340pF @ 15V | 3V, 8V | +10V, -8V | |||
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3,047
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Texas Instruments | MOSFET N-CH 30V 5A 6SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.3W (Ta) | N-Channel | 30V | 5A (Tc) | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | 340pF @ 15V | 3V, 8V | +10V, -8V | |||
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3,039
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Texas Instruments | MOSFET N-CH 30V 5A 6SON | Automotive, AEC-Q100, NexFET™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.3W (Ta) | N-Channel | 30V | 5A (Tc) | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | 340pF @ 15V | 3V, 8V | +10V, -8V | |||
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1,290
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Nexperia USA Inc. | MOSFET N-CH 30V SOT883 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | DFN1006-3 | 350mW (Ta), 6.25W (Tc) | N-Channel | 30V | 1.4A (Ta) | 250 mOhm @ 1.4A, 4.5V | 950mV @ 250µA | 2.7nC @ 4.5V | 89pF @ 15V | 1.5V, 4.5V | ±8V | |||
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2,269
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Texas Instruments | MOSFET N-CH 30V 2.3A PICOSTAR | FemtoFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 64 mOhm @ 500mA, 8V | 1.2V @ 250µA | 2.7nC @ 4.5V | 347pF @ 15V | 1.8V, 8V | 10V | |||
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2,360
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 6A SOT-23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | 30V | 6A (Ta) | 38 mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7nC @ 4.5V | 340pF @ 15V | 4.5V, 10V | ±20V | |||
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2,544
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Nexperia USA Inc. | MOSFET N-CH 30V SOT883 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | DFN1006B-3 | 350mW (Ta), 6.25W (Tc) | N-Channel | 30V | 1.4A (Ta) | 250 mOhm @ 1.4A, 4.5V | 950mV @ 250µA | 2.7nC @ 4.5V | 89pF @ 15V | 1.5V, 4.5V | ±8V |
