Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM060N03ECP ROG
Per Unit
$0.63
RFQ
1,721
Ships today + free overnight shipping
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 70A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 54W (Tc) N-Channel 30V 70A (Tc) 6 mOhm @ 20A, 10V 2.5V @ 250µA 11.1nC @ 4.5V 1210pF @ 25V 4.5V, 10V ±20V
TSM055N03EPQ56 RLG
Per Unit
$0.71
RFQ
2,981
Ships today + free overnight shipping
Taiwan Semiconductor Corporation MOSFET N-CH 30V 80A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 74W (Tc) N-Channel 30V 80A (Tc) 5.5 mOhm @ 20A, 10V 2.5V @ 250µA 11.1nC @ 4.5V 1210pF @ 25V 4.5V, 10V ±20V
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