Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PMF87EN,115
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RFQ
1,424
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 30V 1.7A SOT323 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-70, SOT-323 SOT-323-3 275mW (Ta) N-Channel 30V 1.7A (Ta) 80 mOhm @ 1.7A, 10V 2.5V @ 250µA 4.7nC @ 10V 135pF @ 15V 4.5V, 10V ±20V
NVTR4503NT1G
Per Unit
$0.52
RFQ
1,959
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 30V 1.5A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 420mW (Ta) N-Channel 30V 1.5A (Ta) 110 mOhm @ 2.5A, 10V 3V @ 250µA 7nC @ 10V 135pF @ 15V 4.5V, 10V ±20V
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