- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,266
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Infineon Technologies | MOSFET N-CH 30V 25A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 25A (Ta), 140A (Tc) | 2.9 mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 3770pF @ 15V | 4.5V, 10V | ±20V | ||
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3,469
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Infineon Technologies | MOSFET N-CH 30V 25A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 25A (Ta), 140A (Tc) | 2.9 mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 3770pF @ 15V | 4.5V, 10V | ±20V | ||
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3,870
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Vishay Siliconix | MOSFET N-CH 30V 50A PPAK SO-8 | SkyFET®, TrenchFET® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.8W (Ta), 56W (Tc) | N-Channel | - | 30V | 50A (Tc) | 4.8 mOhm @ 15A, 10V | 2.7V @ 1mA | 92nC @ 10V | 3770pF @ 15V | 4.5V, 10V | ±20V |
