- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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680
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NXP USA Inc. | MOSFET N-CH 30V 6.2A 6TSOP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP | 540mW (Ta), 6.25W (Tc) | N-Channel | - | 30V | 6.2A (Ta) | 23 mOhm @ 6.2A, 10V | 2.5V @ 250µA | 11nC @ 10V | 492pF @ 15V | 4.5V, 10V | ±20V | ||
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2,103
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Vishay Siliconix | MOSFET N-CH 30V 6.2A 8SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 30V | 6.2A (Ta) | 24 mOhm @ 8.1A, 10V | 3V @ 250µA | 23nC @ 10V | - | 4.5V, 10V | ±20V | ||
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1,034
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Diodes Incorporated | MOSFET N-CH 20V 6.2A 8-MSOP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | 1.1W (Ta) | N-Channel | - | 20V | 6.2A (Ta) | 20 mOhm @ 11A, 4.5V | 700mV @ 250µA | 18.6nC @ 4.5V | 1900pF @ 10V | 2.5V, 4.5V | ±20V | ||
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2,270
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A DPAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | ||
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1,029
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Diodes Incorporated | MOSFET N-CH 20V 6.2A 8-MSOP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | 1.1W (Ta) | N-Channel | - | 20V | 6.2A (Ta) | 20 mOhm @ 11A, 4.5V | 700mV @ 250µA | 18.6nC @ 4.5V | 1900pF @ 10V | 2.5V, 4.5V | ±20V | |||
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1,336
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Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.8W (Ta) | N-Channel | - | 60V | 6.2A (Ta) | 22 mOhm @ 10.3A, 10V | 3V @ 250µA | 27nC @ 10V | - | 4.5V, 10V | ±20V | |||
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1,502
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Diodes Incorporated | MOSFET N-CH 20V 6.2A TSOT-26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | N-Channel | - | 20V | 6.2A (Ta) | 24 mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 8.3nC @ 4.5V | 856pF @ 10V | 2.5V, 4.5V | ±8V | |||
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3,899
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ON Semiconductor | MOSFET N-CH 20V 6.2A SSOT-6 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 1.6W (Ta) | N-Channel | - | 20V | 6.2A (Ta) | 24 mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 16nC @ 4.5V | 1125pF @ 10V | 2.5V, 4.5V | ±8V | |||
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3,491
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.8W (Ta) | N-Channel | - | 60V | 6.2A (Ta) | 22 mOhm @ 10.3A, 10V | 3V @ 250µA | 27nC @ 10V | - | 4.5V, 10V | ±20V | |||
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1,340
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 20V 6.2A 6-SSOT | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 1.6W (Ta) | N-Channel | - | 20V | 6.2A (Ta) | 24 mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | 895pF @ 10V | 2.5V, 4.5V | ±12V | |||
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3,717
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ON Semiconductor | MOSFET N-CH 100V 6.2A DPAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3.1W (Ta), 69W (Tc) | N-Channel | - | 100V | 6.2A (Ta) | 36 mOhm @ 5.9A, 10V | 4.5V @ 250µA | 31nC @ 10V | 1740pF @ 50V | 10V | ±20V | |||
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1,669
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Diodes Incorporated | MOSFET N-CH 30V 6.2A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 900mW (Ta) | N-Channel | - | 30V | 6.2A (Ta) | 25 mOhm @ 4A, 10V | 1.8V @ 250µA | 18.4nC @ 10V | 873pF @ 15V | 2.5V, 10V | ±20V |
