- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,732
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Taiwan Semiconductor Corporation | MOSFET N-CH 500V 7.2A TO252 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 89W (Tc) | N-Channel | - | 500V | 7.2A (Tc) | 850 mOhm @ 3.6A, 10V | 4V @ 250µA | 26.6nC @ 10V | 1595pF @ 25V | 10V | ±30V | ||
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3,502
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STMicroelectronics | MOSFET N-CH 500V 7.2A D2PAK | SuperMESH™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 500V | 7.2A (Tc) | 850 mOhm @ 3.6A, 10V | 4.5V @ 100µA | 32nC @ 10V | 910pF @ 25V | 10V | ±30V |
