- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
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9 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,844
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Renesas Electronics America | MOSFET N-CH 60V 45A LFPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | 60V | 45A (Ta) | 4.8 mOhm @ 22.5A, 10V | 2.5V @ 1mA | 42nC @ 4.5V | 6100pF @ 10V | 4.5V, 10V | ±20V | ||
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1,582
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Renesas Electronics America | MOSFET N-CH 40V 45A LFPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | 40V | 45A (Ta) | 3.5 mOhm @ 22.5A, 10V | - | 26nC @ 4.5V | 4030pF @ 10V | 4.5V, 10V | ±20V | ||
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1,807
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Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 25W (Tc) | N-Channel | 30V | 45A (Ta) | 3.8 mOhm @ 22.5A, 10V | 2.5V @ 1mA | 27nC @ 4.5V | 4400pF @ 10V | 4.5V, 10V | ±20V | |||
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3,636
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Infineon Technologies | MOSFET N-CH 25V 45A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | 25V | 45A (Ta) | 1.35 mOhm @ 50A, 10V | 2.1V @ 100µA | 74nC @ 10V | 4812pF @ 13V | 4.5V, 10V | ±20V | ||
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1,538
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Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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1,026
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Rohm Semiconductor | MOSFET N-CH 40V 45A LPTS | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 50W (Tc) | N-Channel | 40V | 45A (Ta) | 13.5 mOhm @ 25A, 10V | 3V @ 1mA | 43nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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1,524
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-SOP ADV | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | 30V | 45A (Ta) | 2.2 mOhm @ 23A, 10V | 2.5V @ 1mA | 113nC @ 10V | 4200pF @ 10V | 4.5V, 10V | ±20V | |||
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1,623
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ON Semiconductor | MOSFET N-CH 60V 45A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 2.4W (Ta), 125W (Tj) | N-Channel | 60V | 45A (Ta) | 28 mOhm @ 22.5A, 5V | 2V @ 250µA | 32nC @ 5V | 1700pF @ 25V | 5V | ±15V | |||
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1,106
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ON Semiconductor | MOSFET N-CH 60V 45A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 2.4W (Ta), 125W (Tj) | N-Channel | 60V | 45A (Ta) | 26 mOhm @ 22.5A, 10V | 4V @ 250µA | 46nC @ 10V | 1725pF @ 25V | 10V | ±20V |