- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,257
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Infineon Technologies | MOSFET N-CH 30V 24A PQFN56 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.4W (Ta) | N-Channel | - | 30V | 24A (Ta), 104A (Tc) | 3.3 mOhm @ 25A, 10V | 2.35V @ 100µA | 51nC @ 4.5V | 4270pF @ 15V | 4.5V, 10V | ±20V | ||
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2,458
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Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 3.6W (Ta), 42W (Tc) | N-Channel | - | 30V | 27A (Ta), 94A (Tc) | 3.3 mOhm @ 25A, 10V | 2V @ 250µA | 75nC @ 4.5V | 6930pF @ 15V | 4.5V, 7V | ±12V | ||
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3,518
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Nexperia USA Inc. | MOSFET N-CH 30V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 114W (Tc) | N-Channel | - | 30V | 100A (Tc) | 3.3 mOhm @ 25A, 10V | 2.15V @ 1mA | 64nC @ 10V | 3907pF @ 15V | 4.5V, 10V | ±20V | |||
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1,302
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Nexperia USA Inc. | MOSFET N-CH 40V LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 117W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.3 mOhm @ 25A, 10V | 4V @ 1mA | 49nC @ 10V | 2754pF @ 20V | 10V | ±20V | |||
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3,269
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 30V 24A PQFN56 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.4W (Ta) | N-Channel | - | 30V | 24A (Ta), 104A (Tc) | 3.3 mOhm @ 25A, 10V | 2.35V @ 100µA | 51nC @ 4.5V | 4270pF @ 15V | 4.5V, 10V | ±20V |
