Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSC047N08NS3GATMA1
Per Unit
$2.61
RFQ
3,828
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 80V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel 80V 18A (Ta), 100A (Tc) 4.7 mOhm @ 50A, 10V 3.5V @ 90µA 69nC @ 10V 4800pF @ 40V 6V, 10V ±20V
NTMFS5C646NLT1G
Per Unit
$1.55
RFQ
3,458
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 60V 32A SO-8FL - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 79W (Tc) N-Channel 60V 19A (Ta) 4.7 mOhm @ 50A, 10V 2V @ 250µA 33.7nC @ 10V 2164pF @ 25V 4.5V, 10V ±20V
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