- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
12 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,009
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Vishay Siliconix | MOSFET N-CH 20V 19A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.6W (Ta) | N-Channel | - | 20V | 19A (Ta) | 2.8 mOhm @ 25A, 10V | 3V @ 250µA | 50nC @ 4.5V | 5620pF @ 10V | 4.5V, 10V | ±20V | ||
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1,225
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NXP USA Inc. | MOSFET N-CH 40V 75A D2PAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 40V | 75A (Tc) | 2.8 mOhm @ 25A, 10V | 2V @ 1mA | 93.6nC @ 5V | 7880pF @ 25V | 4.5V, 10V | ±15V | ||
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3,919
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Nexperia USA Inc. | MOSFET N-CH 25V 100A LFPAK | TrenchMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 25V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 2V @ 1mA | 32nC @ 4.5V | 4308pF @ 12V | - | - | ||
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1,539
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Nexperia USA Inc. | MOSFET N-CH 40V 100A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 2V @ 1mA | 93.4nC @ 5V | 10502pF @ 25V | 5V, 10V | ±15V | |||
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1,105
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Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 106W (Tc) | N-Channel | - | 30V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 1.95V @ 1mA | 39nC @ 10V | 2435pF @ 15V | 4.5V, 10V | ±20V | |||
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1,182
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Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 131W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 4V @ 1mA | 63nC @ 10V | 3776pF @ 12V | 10V | ±20V | |||
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2,043
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Diodes Incorporated | MOSFET N-CH 60V 22A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.1W (Ta), 105W (Tc) | N-Channel | - | 60V | 22A (Ta), 90A (Tc) | 2.8 mOhm @ 25A, 10V | 3V @ 250µA | 96.3nC @ 10V | 4515pF @ 30V | 4.5V, 10V | ±20V | |||
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1,900
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Nexperia USA Inc. | MOSFET N-CH 30V 100A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 204W (Tc) | N-Channel | - | 30V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 2.8V @ 1mA | 114nC @ 10V | 6960pF @ 25V | 10V | ±16V | |||
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1,808
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ON Semiconductor | MOSFET N-CH 30V 25A POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 78W (Tc) | N-Channel | - | 30V | 25A (Ta), 42A (Tc) | 2.8 mOhm @ 25A, 10V | 3V @ 250µA | 84nC @ 10V | 5565pF @ 15V | 4.5V, 10V | ±20V | |||
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1,890
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Nexperia USA Inc. | MOSFET N-CH 25V 70A LFPAK33 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 88W (Tc) | N-Channel | - | 25V | 70A (Tc) | 2.8 mOhm @ 25A, 10V | 2.15V @ 1mA | 37.7nC @ 10V | 2432pF @ 12.5V | 4.5V, 10V | ±20V | |||
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983
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Diodes Incorporated | MOSFET N-CH 60V 22A PWRDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.6W (Ta), 138W (Tc) | N-Channel | - | 60V | 22A (Ta), 100A (Tc) | 2.8 mOhm @ 25A, 10V | 3V @ 250µA | 96.3nC @ 10V | 4515pF @ 30V | 4.5V, 10V | ±20V | |||
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1,387
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 50A SOP-8 ADV | U-MOSIV-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 30V | 50A (Ta) | 2.8 mOhm @ 25A, 10V | 2.3V @ 1mA | 88nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V |