- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,958
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 | UniFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 83W (Tc) | N-Channel | - | 200V | 7.6A (Tc) | 360 mOhm @ 3.8A, 10V | 2.5V @ 250µA | 16nC @ 10V | 585pF @ 25V | 5V, 10V | ±20V | |||
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2,824
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 51W (Tc) | N-Channel | - | 200V | 7.6A (Tc) | 360 mOhm @ 3.8A, 10V | 2V @ 250µA | 17nC @ 5V | 830pF @ 25V | 5V, 10V | ±20V |
