- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,400
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 79W (Tc) | N-Channel | - | 60V | 50A (Tc) | 7.9 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | 4.5V, 10V | ±20V | |||
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3,086
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.4A (Ta), 100A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | 5900pF @ 50V | 10V | ±20V | |||
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1,331
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 40V 50A TO252-3-313 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 46W (Tc) | N-Channel | - | 40V | 50A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 17µA | 22.4nC @ 10V | 1780pF @ 6V | 10V | ±20V |
