- Part Status :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,715
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Vishay Siliconix | MOSFET N-CH 60V 3.2A 6-TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 60V | - | 100 mOhm @ 3.2A, 10V | 1V @ 250µA (Min) | 16nC @ 10V | - | 4.5V, 10V | ±20V | ||
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3,980
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Vishay Siliconix | MOSFET N-CH 60V 4.1A 6-TSOP | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.3W (Tc) | N-Channel | - | 60V | 4.1A (Tc) | 100 mOhm @ 3.2A, 10V | 3V @ 250µA | 11nC @ 10V | 350pF @ 30V | 4.5V, 10V | ±20V | |||
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3,358
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 60V 4.1A 6-TSOP | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.3W (Tc) | N-Channel | - | 60V | 4.1A (Tc) | 100 mOhm @ 3.2A, 10V | 3V @ 250µA | 11nC @ 10V | 350pF @ 30V | 4.5V, 10V | ±20V |
