Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PH4840S,115
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RFQ
1,238
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 40V 94.5A LFPAK TrenchMOS™ Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 62.5W (Tc) N-Channel - 40V 94.5A (Tc) 4.1 mOhm @ 25A, 10V 3V @ 1mA 67nC @ 10V 3660pF @ 10V - -
BUK9Y4R8-60E,115
Per Unit
$1.39
RFQ
1,575
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 60V 100A LFPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 238W (Tc) N-Channel - 60V 100A (Tc) 4.1 mOhm @ 25A, 10V 2.1V @ 1mA 50nC @ 5V 7853pF @ 25V 5V ±10V
BUK9M5R2-30EX
Per Unit
$0.72
RFQ
3,300
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 30V 70A LFPAK33 Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 LFPAK33 79W (Ta) N-Channel - 30V 70A (Ta) 4.1 mOhm @ 25A, 10V 2.1V @ 1mA 22.5nC @ 5V 2467pF @ 25V 5V, 10V ±10V
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