- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,371
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Nexperia USA Inc. | MOSFET N-CH 40V 79A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 94.3W (Tc) | N-Channel | 40V | 79A (Tc) | 7.6 mOhm @ 20A, 10V | 4V @ 1mA | 26.2nC @ 10V | 1650pF @ 25V | 10V | ±20V | |||
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1,381
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 60V 72A TO263 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 2.1W (Ta), 100W (Tc) | N-Channel | 60V | 11A (Ta), 72A (Tc) | 7.6 mOhm @ 20A, 10V | 3.6V @ 250µA | 55nC @ 10V | 2995pF @ 30V | 10V | ±20V | ||
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3,200
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Diodes Incorporated | MOSFET N-CH 40V 15.7A POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.8W (Ta), 136W (Tc) | N-Channel | 40V | 15.7A (Ta), 100A (Tc) | 7.6 mOhm @ 20A, 10V | 4V @ 250µA | 41.9nC @ 10V | 2082pF @ 25V | 10V | ±20V | |||
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998
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Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 69W (Tc) | N-Channel | 60V | 20A (Tc) | 7.6 mOhm @ 20A, 10V | 4V @ 35µA | 50nC @ 10V | 4000pF @ 30V | 10V | ±20V | ||
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2,112
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Diodes Incorporated | MOSFET BVDSS: 31V 40V POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.8W (Ta), 136W (Tc) | N-Channel | 40V | 15.7A (Ta), 100A (Tc) | 7.6 mOhm @ 20A, 10V | 4V @ 250µA | 41.9nC @ 10V | 2082pF @ 25V | 10V | ±20V |